Biography

Wei Kong received his BS degree from Sun Yat-sen University, China, in 2007, and Ph.D. degree in Electrical and Computer Engineering from Duke University in 2016. He worked as a postdoc in Massachusetts Institute of Technology with Prof. Jeehwan Kim from 2016 to 2020, before joining Westlake University. Wei Kong has published more than 25 research papers, and 6 US patents. Wei Kong received the 2018 Energy Fellow from MIT.

Research

His research interests are in the synthesis and processing of novel high-performance semiconductor materials, and their applications in electrical and optical devices. His recent research activities involve the development of single-crystalline ultrathin semiconductor materials, including 2D materials (graphene, hBN and TMDCs), and free-standing III-V nitrides, II-VI oxides membranes. Wei Kong aims to develop the platform for heterointegration of dissimilar thin film semiconductors, in order to achieve the multi-functionalities required in the emerging applications such as in internet of things, artificial intelligent, human-machine interfacing. 

Representative Publications

1. Hyunseok Kim, Celesta S. Chang, Sangho Lee, Jie Jiang, Junseok Jeong, Minseong Park, Yuan Meng, Jongho Ji, Yeunwoo Kwon, Xuechun Sun, Wei Kong*, Hyun S. Kum*, Sang-Hoon Bae*, Kyusang Lee*, Young Joon Hong*, Jian Shi*, and Jeehwan Kim*,  "Remote epitaxy", Nature Reviews Methods Primers, (accepted 2022).

2. K. Qiao, Y. Liu, C. Kim, R. J. Molnar, T. Osadchy, W. Li, X. Sun, H. Li, R. L. Myers-Ward, D. Lee, S. Subramanian, H. Kim, K. Lu, J. A. Robinson, W. Kong*, J. Kim*. Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes. Nano Lett., 21, 9, 4013–4020 (2021).

3. H. Kum†, H. Lee†, S. Kim†, S. Lindemann†, W. Kong, K. Qiao, P. Chen, S. Subramanian, L. Ranno, S. Seo, J. Irwin, S.-H. Bae, H. Li, K. Lee, M. S. Rzchowski, J. A. Robinson, B. Yildiz, C.-B. Eom, and J. Kim “Heterogeneous integration of freestanding epitaxial complex-oxide membranes”, Nature 578 75–81 (2020).

4. S.-H. Bae, K. Lu, Y. Han, S. Kim, K. Qiao, C. Choi, Y. Nie, H. Kim, H. S Kum, P. Chen, W. Kong, B.-S. Kang, C. Kim, J. Lee, Y. Baek, J. Shim, J. Park, M. Joo, D. A Muller, K. Lee, and J. Kim, “Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy”, Nature Nanotechnology 15, 272–276 (2020).

5. W. Kong, S.-H. Bae, H. Kum, J. Kim, “Path towards graphene commercialization from lab to market”, Nature Nanotechnology 14 927-938 (2019).

6. H. Kum, D. Lee, W. Kong, Y. Kim, K. Lee, and J. Kim, “Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices”, Nature Electronics 2 439–450 (2019).

7. S.-H. Bae, H. Kum, W. Kong, Y. Kim, C. Choi, B. Lee, P. Lin, and J. Kim, “Integration of bulk materials with two-dimensional materials for physical coupling and their applications”. Nature Materials 18, 550–560 (2019).

8. W. Kong†, H. Li†, K. Qiao†, Y. Kim, K. Lee, Y. Nie, D. Lee, T. Osadchy, R. J. Molnar, D. K. Gaskill, R. L. Myers-Ward, K. M. Daniels, Y. Zhang, S. Sundram, Y. Yu, S.-H. Bae, S. Rajan, Y. Shao-Horn, K. Cho, A. Ougazzaden, J. C. Grossman, and J. Kim, “Polarity governs atomic interaction through two-dimensional materials”. Nature Materials 17, pp. 999-1004 (2018).

9. J. Shim†, S.-H. Bae†, W. Kong† (equal contributor), D. Lee, K. Qiao, D. Nezich, Y. J. Park, R. Zhao, S. Sundaram, X. Li, H. Yeon, C. Choi, H. Kum, R. Yue, G. Zhou, Y. Ou, K. Lee, J. Moodera, X. Zhao, J.-H. Ahn, C. Hinkle, A. Ougazzaden, and J. Kim, “Controlled crack propagation for atomic precision handling of wafer scale two dimensional materials”. Science, 362, pp. 665-670 (2018).

10. Y. Kim, S. S. Cruz, Y. Song, B. O. Alawode, J. M. Johnson, W. Kong, C. Heidelberger, C. Choi, K. Lee, S. Choi, E. A. Fitzgerald, A. M. Kolpak, J. Kong, J. Hwang, and J. Kim, “Remote epitaxy through graphene: Role of underlying substrates on van der Waals epitaxy”. Nature, 544 pp340 (2017).

11. J. Shim, D.-H. Kang, Y. Kim, H. Kum, W. Kong, S.-H. Bae, I. Almansouri, K. Lee, J. -H. Park, and J. Kim, “Recent progress in Van der Waals (vdW) heterojunction-based electronic and optoelectronic devices”. Carbon 133 78-89 (2018).

12. T.-J. Lu, M. Fanto, H. Choi, P. Thomas, J. Steidle, S. Mouradian, W. Kong, D. Zhu, H. Moon, K. Berggren, J. Kim, M. Soltani, S. Preble, and D. Englund, “An aluminum nitride integrated photonics platform for the ultraviolet to visible spectrum”. Optical Express, 26 (9), 11147-11160 (2018).